The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 03, 2013
Filed:
Aug. 03, 2012
Applicants:
Till Schloesser, Munich, DE;
Rolf Weis, Dresden, DE;
Ralf Rudolf, Dresden, DE;
Inventors:
Assignee:
Infineon Technologies Dresden GmbH, Dresden, DE;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/08 (2006.01); H01L 29/417 (2006.01); H01L 29/78 (2006.01);
U.S. Cl.
CPC ...
Abstract
A semiconductor device includes a first transistor with a first drift zone, and a plurality of second transistors, each second transistor comprising a source region, a drain region and a gate electrode. The second transistors are electrically coupled in series to form a series circuit that is electrically coupled to the first transistor, the first and the plurality of second transistors being at least partially disposed in a semiconductor substrate including a buried doped layer, wherein the source or the drain regions of the second transistors are disposed in the buried doped layer.