The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 03, 2013
Filed:
Sep. 18, 2009
Michael R. Hsing, Saratoga, CA (US);
Martin E. Garnett, Los Gatos, CA (US);
Ognjen Milic, San Jose, CA (US);
Michael R. Hsing, Saratoga, CA (US);
Martin E. Garnett, Los Gatos, CA (US);
Ognjen Milic, San Jose, CA (US);
Monolithic Power Systems, Inc., San Jose, CA (US);
Abstract
In one embodiment, a junction field effect transistor having a substrate, wherein formed on the substrate is a graded n-doped region having a high doping concentration in an inner region and a low doping concentration in an outer region, with a p-doped buried region adjacent to the graded n-doped region near the outer region, and a spiral resistor connected to the graded n-doped region at its inner region and at its outer region. An ohmic contact at the inner region provides the drain, an ohmic contact at the outer region provides the source, and an ohmic contact at the substrate provides the gate.