The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 03, 2013
Filed:
Nov. 12, 2009
Applicant:
Léon C. M. Van Den Oever, Rosmalen, NL;
Inventor:
Léon C. M. van den Oever, Rosmalen, NL;
Assignee:
EPCOS AG, Munich, DE;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/78 (2006.01);
U.S. Cl.
CPC ...
Abstract
An n-layer is arranged above a substrate, which can be GaAs, and a p-layer () is arranged on the n-layer. The p-layer is separated by a gate electrode into two separate portions forming source and drain. The gate electrode is insulated from the semiconductor material by a gate dielectric. Source/drain contacts are electrically conductively connected with the portions of the p-layer.
van den Oever, Léon C. M.. (2013). P-type field-effect transistor and method of production (U.S. Patent No. 8598627). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/8598627
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile