The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 03, 2013
Filed:
Feb. 04, 2012
Kazuhiro Mochizuki, Tokyo, JP;
Takashi Ishigaki, Hino, JP;
Akihisa Terano, Hachioji, JP;
Tomonobu Tsuchiya, Hachioji, JP;
Kazuhiro Mochizuki, Tokyo, JP;
Takashi Ishigaki, Hino, JP;
Akihisa Terano, Hachioji, JP;
Tomonobu Tsuchiya, Hachioji, JP;
Hitachi, Ltd., Tokyo, JP;
Abstract
In a semiconductor device including a stack structure having heterojunction units formed by alternately stacking GaN (gallium nitride) films and barrier films which are different in forbidden band width, a first electrode formed in a Schottky barrier contact with one sidewall of the stack structure, and a second electrode formed in contact with the other sidewall, an oxide film is interposed between the first electrode and the barrier films. Therefore, the reverse leakage current is prevented from flowing through defects remaining in the barrier films due to processing of the barrier films, so that a reverse leakage current of a Schottky barrier diode is reduced.