The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 03, 2013
Filed:
Sep. 06, 2011
Anne Le Gouil, Fremont, CA (US);
Jeffrey R. Lindain, Tracy, CA (US);
Yasushi Ishikawa, Fremont, CA (US);
Yoko Yamaguchi-adams, Union City, CA (US);
Anne Le Gouil, Fremont, CA (US);
Jeffrey R. Lindain, Tracy, CA (US);
Yasushi Ishikawa, Fremont, CA (US);
Yoko Yamaguchi-Adams, Union City, CA (US);
Lam Research Corporation, Fremont, CA (US);
Abstract
A method for etching features in a plurality of silicon based bilayers forming a stack on a wafer in a plasma processing chamber is provided. A main etch gas is flowed into the plasma processing chamber. The main etch gas is formed into a plasma, while providing a first pressure. A wafer temperature of less than 20° C. is maintained. The pressure is ramped to a second pressure less than the first pressure as the plasma etches through a plurality of the plurality of silicon based bilayers. The flow of the main etch gas is stopped after a first plurality of the plurality of bilayers is etched.