The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 03, 2013
Filed:
Jul. 08, 2010
Applicants:
Jong-han Shin, Gyeonggi-do, KR;
Noh-jung Kwak, Gyeonggi-do, KR;
Myung-ok Kim, Gyeonggi-do, KR;
Inventors:
Assignee:
Hynix Semiconductor Inc., Gyeonggi-do, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/76 (2006.01); H01L 21/3205 (2006.01);
U.S. Cl.
CPC ...
Abstract
A method for fabricating a semiconductor device includes sequentially stacking a pad oxide layer and a hard mask layer over a substrate, forming a device isolation layer over the substrate, forming a capping layer pattern configured to open a first region of the substrate and cover a second region of the substrate, removing the hard mask layer, removing the capping layer pattern, and removing the pad oxide layer.