The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 03, 2013
Filed:
Nov. 13, 2009
Valentina Ivanova-hristova, Grenoble, FR;
Barbara DE Salvo, Montbonnot Saint Martin, FR;
Valentina Ivanova-Hristova, Grenoble, FR;
Barbara De Salvo, Montbonnot Saint Martin, FR;
Commissariat a l'Energie Atomique, Paris, FR;
Abstract
A process for fabricating a charge storage layer comprising metal particles of a memory cell, said layer consisting of an organic layer comprising, on the surface, said metal particles, said process comprising the following steps: (a) a step of grafting, onto a metallic, semiconductor or electrically insulating substrate, an organic layer comprising, on the surface, groups capable of complexing at least one metallic element in cationic form; (b) a step of bringing said layer into contact with a solution comprising said metallic element in cationic form, by means of which said metallic element is complexed by said abovementioned groups; and (c) a step of reducing said complexed metallic element to the metallic element in oxidation state 0, by means of which metal particles are obtained.