The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 03, 2013
Filed:
Dec. 27, 2011
Young-ho Choe, Seoul, KR;
Young-hee Lee, Seoul, KR;
Yong-woo Choi, Seoul, KR;
Hyung-seok Kim, Seoul, KR;
Ho-gyoung Kim, Seoul, KR;
Young-Ho Choe, Seoul, KR;
Young-Hee Lee, Seoul, KR;
Yong-Woo Choi, Seoul, KR;
Hyung-Seok Kim, Seoul, KR;
Ho-Gyoung Kim, Seoul, KR;
LG Electronics Inc., Seoul, KR;
Abstract
Discussed are an ink containing nanoparticles for formation of thin film of a solar cell and its preparation method, CIGS thin film solar cell having at least one light absorption layer formed by coating or printing the above ink containing nanoparticles on a rear electrode, and a process for manufacturing the same. More particularly, the above absorption layer includes Cu, In, Ga and Se elements as constitutional ingredients thereof and such elements exist in the light absorption layer by coating or printing an ink that contains CuSe nanoparticles and (In,Ga)Senanoparticles on the rear electrode, and heating the treated electrode with the ink. Since Cu(In,Ga)Se(CIGS) thin film is formed using the ink containing nanoparticles, a simple process is used without requirement of vacuum processing or complex equipment and particle size of the thin film, Ga doping concentration, etc., can be easily regulated.