The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 26, 2013
Filed:
Mar. 09, 2011
Mankit Lee, Hong Kong, CN;
Chiuming Lueng, Hong Kong, CN;
Cheukwing Leung, Hong Kong, CN;
Juren Ding, Hong Kong, CN;
Rongkwang NI, Hong Kong, CN;
Mankit Lee, Hong Kong, CN;
Chiuming Lueng, Hong Kong, CN;
Cheukwing Leung, Hong Kong, CN;
Juren Ding, Hong Kong, CN;
Rongkwang Ni, Hong Kong, CN;
SAE Magnetics (H.K.) Ltd., Hong Kong, CN;
Abstract
A method for measuring a temperature rise induced by bias current/bias voltage in a magnetic tunnel junction includes: (a) applying an external time-changing magnetic field to the magnetic tunnel junction; (b) measuring different first outer pin flip field values under different temperature values; (c) correlating the temperature values with the outer pin flip field values; (d) measuring different second outer pin flip field values under different bias current/bias voltage values; (e) correlating the different bias current/bias voltage-values with the measured different second outer pin flip field values; and (f) correlating temperature values and bias current/bias voltage values according to the results produced by (c) and (e). The method can determine what kind of TMR reader design provides more stable and reliable reading performance, especially under higher operational temperatures.