The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 26, 2013
Filed:
Jun. 08, 2011
Jong-hoon Lee, Hwaseong-si, KR;
Nam-hee Lee, Seoul, KR;
Jong-hoon Lee, Hwaseong-si, KR;
Nam-hee Lee, Seoul, KR;
Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;
Abstract
A flash memory device wherein off cell margin is increased by controlling a voltage of a sensing node and a corresponding reading method, wherein the flash memory device includes a memory cell array; a sensing node voltage controller generating a precharge voltage and a sensing node voltage control signal; and a page buffer unit connected to the memory cell array through bit lines and having page buffers. The page buffers include a bit line connection unit connected between a corresponding bit line and a sensing node, that controls a voltage of the sensing node according to the sensing node voltage control signal; a precharge unit which precharges the sensing node according to the precharge voltage responsive to a precharge control signal; and a data input/output unit sensing a voltage level of the sensing node responsive to a latch control signal and outputting the data of the selected memory cell.