The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 8593173 B1

PDF
Full Text
Expired
Date of Patent:
Nov. 26, 2013

Filed:

Sep. 26, 2011
Applicants:

Jung Pill Kim, San Diego, CA (US);

Tae Hyun Kim, San Diego, CA (US);

Wenqing Wu, San Diego, CA (US);

Xiaochun Zhu, San Diego, CA (US);

Seung H. Kang, San Diego, CA (US);

Inventors:

Jung Pill Kim, San Diego, CA (US);

Tae Hyun Kim, San Diego, CA (US);

Wenqing Wu, San Diego, CA (US);

Xiaochun Zhu, San Diego, CA (US);

Seung H. Kang, San Diego, CA (US);

Assignee:

QUALCOMM Incorporated, San Diego, CA (US);

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H03K 19/177 (2006.01);
U.S. Cl.
CPC ...
Abstract

A Magnetic Random Access Memory (MRAM) logic circuit includes read sensing circuitry having a first level corresponding to a first category of logic circuitry and a second logic level corresponding to a second category of logic circuitry. The logic circuitry may be switchable between circuitry having the first logic level and circuitry having the second logic level according to the category of the logic circuit being implemented.


Find Patent Forward Citations

Kim, Jung. (2013). Programmable logic sensing in magnetic random access memory (U.S. Patent No. 8593173). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/8593173

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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