The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 26, 2013
Filed:
Aug. 23, 2010
Pere Roca I Cabarrocas, Villebon sur Yvette, FR;
Mario Moreno, Palaiseau, FR;
Dimitri Daineka, Palaiseau, FR;
Pere Roca I Cabarrocas, Villebon sur Yvette, FR;
Mario Moreno, Palaiseau, FR;
Dimitri Daineka, Palaiseau, FR;
Ecole Polytechnique, Palaiseau, FR;
Centre National de la Recherche Scientifique, Paris, FR;
Abstract
The invention relates to a method for texturing the surface of a gaseous phase silicon substrate, and to a textured silicon substrate for a solar cell. The method includes at least a step a) of exposing the surface to an SF/Oradiofrequency plasma for a duration of 2 to 30 minutes in order to produce a silicon substrate having a textured surface having pyramidal structures, the SF/Oratio being 2 to 10. During step a) the power density generated using the radiofrequency plasma is greater than or equal to 2500 mW/cm, and the SF/Opressure in the reaction chamber is lower than or equal to 100 mTorrs, so as to produce a silicon substrate having a textured surface having inverted pyramidal structures.