The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 26, 2013
Filed:
Mar. 30, 2009
Kenichi Miyazaki, Kyoto, JP;
Osamu Matsushima, Kyoto, JP;
Shigeru Niki, Ibaraki, JP;
Keiichiro Sakurai, Ibaraki, JP;
Shogo Ishizuka, Ibaraki, JP;
Kenichi Miyazaki, Kyoto, JP;
Osamu Matsushima, Kyoto, JP;
Shigeru Niki, Ibaraki, JP;
Keiichiro Sakurai, Ibaraki, JP;
Shogo Ishizuka, Ibaraki, JP;
Rohm Co., Ltd., Kyoto, JP;
National Institute of Advanced Industrial Science and Technology, Tokyo, JP;
Abstract
A photoelectric conversion device has a high S/N ratio and can increase the detection efficiency even under a low luminance. The photoelectric conversion device generates an increased electric charge by impact ionization in a photoelectric conversion unit formed from a chalcopyrite type semiconductor, so as to improve dark current characteristic. The photoelectric conversion device includes: a lower electrode layer; a compound semiconductor thin film of chalcopyrite structure disposed on the lower electrode layer and having a high resistivity layer on a surface; and a transparent electrode layer disposed on the compound semiconductor thin film , wherein the lower electrode layer, the compound semiconductor thin film, and the transparent electrode layer are laminated one after another, and a reverse bias voltage is applied between the transparent electrode layer and the lower electrode layer, and the multiplication by the impact ionization of the electric charge generated by photoelectric conversion is generated within the compound semiconductor thin film. It is also possible to provide a fabrication method for such photoelectric conversion device, and a solid state imaging device using the photoelectric conversion device.