The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 26, 2013

Filed:

Jan. 11, 2011
Applicants:

Nobutaka Watanabe, Mie-ken, JP;

Kazuyuki Higashi, Kanagawa-ken, JP;

Gaku Sudo, Kanagawa-ken, JP;

Inventors:

Nobutaka Watanabe, Mie-ken, JP;

Kazuyuki Higashi, Kanagawa-ken, JP;

Gaku Sudo, Kanagawa-ken, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/792 (2006.01); H01L 29/76 (2006.01);
U.S. Cl.
CPC ...
Abstract

According to one embodiment, a semiconductor memory device includes a stacked body, a contact, a semiconductor member, a charge storage layer, and a penetration member. The stacked body includes an electrode film stacked alternately with an insulating film. A configuration of an end portion of the stacked body is a stairstep configuration having a step provided every electrode film. The contact is connected to the electrode film from above the end portion. The semiconductor member is provided in a portion of the stacked body other than the end portion to pierce the stacked body in a stacking direction. The charge storage layer is provided between the electrode film and the semiconductor member. The penetration member pierces the end portion in the stacking direction. The penetration member does not include the same kind of material as the charge storage layer.


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