The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 26, 2013
Filed:
Feb. 03, 2012
Shigeru Kinoshita, Kanagawa-ken, JP;
Hisataka Meguro, Mie-ken, JP;
Minori Kajimoto, Kanagawa-ken, JP;
Shigeru Kinoshita, Kanagawa-ken, JP;
Hisataka Meguro, Mie-ken, JP;
Minori Kajimoto, Kanagawa-ken, JP;
Kabushiki Kaisha Toshiba, Tokyo, JP;
Abstract
According to one embodiment, a nonvolatile semiconductor memory device includes a substrate, a tunneling insulating film, a floating gate, a leak suppression unit, an inter-gate insulating film, and a control gate. The substrate includes silicon. The tunneling insulating film is provided on the substrate. The floating gate is provided on the tunneling insulating film. The leak suppression unit is provided on the floating gate. The inter-gate insulating film is provided on the leak suppression unit. The control gate is provided on the inter-gate insulating film. The dielectric constant of the leak suppression unit is higher than a dielectric constant of the inter-gate insulating film.