The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 26, 2013
Filed:
Mar. 08, 2011
Bruce M. Green, Gilbert, AZ (US);
Haldane S. Henry, Scottsdale, AZ (US);
Chun-li Liu, Scottsdale, AZ (US);
Karen E. Moore, Phoenix, AZ (US);
Matthias Passlack, Chandler, AZ (US);
Bruce M. Green, Gilbert, AZ (US);
Haldane S. Henry, Scottsdale, AZ (US);
Chun-Li Liu, Scottsdale, AZ (US);
Karen E. Moore, Phoenix, AZ (US);
Matthias Passlack, Chandler, AZ (US);
Freescale Semiconductor, Inc., Austin, TX (US);
Abstract
Embodiments include semiconductor devices with low leakage Schottky contacts. An embodiment is formed by providing a partially completed semiconductor device including a substrate, a semiconductor on the substrate, and a passivation layer on the semiconductor, and using a first mask, locally etching the passivation layer to expose a portion of the semiconductor. Without removing the first mask, a Schottky contact is formed of a first material on the exposed portion of the semiconductor, and the first mask is removed. Using a further mask, a step-gate conductor of a second material electrically coupled to the Schottky contact is formed overlying parts of the passivation layer adjacent to the Schottky contact. By minimizing the process steps between opening the Schottky contact window in the passivation layer and forming the Schottky contact material in this window, the gate leakage of a resulting field effect device having a Schottky gate may be substantially reduced.