The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 26, 2013
Filed:
Aug. 04, 2011
Mitsuyoshi Mori, Kyoto, JP;
Toru Okino, Osaka, JP;
Yusuke Otake, Toyama, JP;
Hitomi Fujiwara, Toyama, JP;
Mitsuyoshi Mori, Kyoto, JP;
Kazuo Fujiwara, Toyama, JP;
Toru Okino, Osaka, JP;
Yusuke Otake, Toyama, JP;
Panasonic Corporation, Osaka, JP;
Abstract
In each of pixelsarranged in an array pattern, an insulating isolation partelectrically isolates adjacent photoelectric conversion elements, and the photoelectric conversion elementand an amplifier transistor. The insulating isolation partconstitutes a first region A between the photoelectric conversion elementswhere the amplifier transistoris not arranged, and a second region B between the photoelectric conversion elementswhere the amplifier transistoris arranged. A low concentration first isolation diffusion layeris formed below the insulating isolation partconstituting the first region A, and a high concentration second isolation diffusion layerand a low concentration first isolation diffusion layerare formed below the insulating isolation partconstituting the second region B. A source/drain region of the amplifier transistorin the second region B is formed in a well regionformed simultaneously with the second isolation diffusion layer