The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 26, 2013
Filed:
Mar. 25, 2011
Yifeng Wu, Goleta, CA (US);
Primit Parikh, Goleta, CA (US);
Umesh Mishra, Montecito, CA (US);
Marcia Moore, Santa Barbara, CA (US);
Yifeng Wu, Goleta, CA (US);
Primit Parikh, Goleta, CA (US);
Umesh Mishra, Montecito, CA (US);
Marcia Moore, Santa Barbara, CA (US);
Cree, Inc., Goleta, CA (US);
Abstract
A HEMT comprising a plurality of active semiconductor layers formed on a substrate. Source electrode, drain electrode, and gate are formed in electrical contact with the plurality of active layers. A spacer layer is formed on at least a portion of a surface of said plurality of active layers and covering the gate. A field plate is formed on the spacer layer and electrically connected to the source electrode, wherein the field plate reduces the peak operating electric field in the HEMT.