The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 26, 2013
Filed:
Nov. 16, 2006
Manabu Yanagihara, Osaka, JP;
Masahiro Hikita, Hyogo, JP;
Tetsuzo Ueda, Osaka, JP;
Yasuhiro Uemoto, Shiga, JP;
Tsuyoshi Tanaka, Osaka, JP;
Manabu Yanagihara, Osaka, JP;
Masahiro Hikita, Hyogo, JP;
Tetsuzo Ueda, Osaka, JP;
Yasuhiro Uemoto, Shiga, JP;
Tsuyoshi Tanaka, Osaka, JP;
Panasonic Corporation, Osaka, JP;
Abstract
A transistor includes a first semiconductor layer formed on a substrate, a second semiconductor layer formed on the first semiconductor layer and has a band gap larger than that of the first semiconductor layer, a control layer formed on the second semiconductor layer and contains p-type impurities, a gate electrode formed in contact with at least part of the control layer and a source electrode and a drain electrode formed on both sides of the control layer, respectively. A third semiconductor layer made of material having a lower etch rate than that of the control layer is formed between the control layer and the second semiconductor layer.