The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 26, 2013
Filed:
Dec. 20, 2010
Matthias Peter, Regensburg, DE;
Tobias Meyer, Ihrlerstein, DE;
Nikolaus Gmeinwieser, Obertraubling, DE;
Tetsuya Taki, Yokohama, JP;
Hans-jürgen Lugauer, Sinzing, DE;
Alexander Walter, Laaber, DE;
Matthias Peter, Regensburg, DE;
Tobias Meyer, Ihrlerstein, DE;
Nikolaus Gmeinwieser, Obertraubling, DE;
Tetsuya Taki, Yokohama, JP;
Hans-Jürgen Lugauer, Sinzing, DE;
Alexander Walter, Laaber, DE;
Abstract
An optoelectronic semiconductor chip includes an epitaxially grown semiconductor layer sequence based on GaN, InGaN, AlGaN and/or InAlGaN, a p-doped layer sequence, an n-doped layer sequence, an active zone that generates an electromagnetic radiation and is situated between the p-doped layer sequence and the n-doped layer sequence, and at least one AlxGa1-xN-based intermediate layer where 0<x≦1, which is situated at a same side of the active zone as the n-doped layer sequence.