The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 26, 2013

Filed:

Dec. 02, 2010
Applicants:

Takashi Hodota, Ichihara, JP;

Takehiko Okabe, Ichihara, JP;

Inventors:

Takashi Hodota, Ichihara, JP;

Takehiko Okabe, Ichihara, JP;

Assignee:

Toyoda Gosei Co., Ltd., Aichi-ken, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 33/00 (2010.01);
U.S. Cl.
CPC ...
Abstract

Disclosed is a semiconductor light emitting element () which includes: plural n-side columnar conductor portions (), each of which is provided by penetrating a p-type semiconductor layer () and a light emitting layer (), and is electrically connected to an n-type semiconductor layer (); an n-side layer-like conductor portion (), which is disposed on the rear surface side of the p-type semiconductor layer () to face the surface of the light emitting layer () when viewed from the light emitting layer (), and is electrically connected to the n-side columnar conductor portions (); plural p-side columnar conductor portions (), each of which is electrically connected to the p-type semiconductor layer (); and a p-side layer-like conductor portion (), which is disposed on the rear surface side of the p-type semiconductor layer () to face the light emitting layer () when viewed from the light emitting layer (), and is electrically connected to the p-side columnar conductor portions (). Thus, nonuniformity of the quantity of light outputted from the light emitting layer of the semiconductor light emitting element is suppressed, and reduction of the area of the light emitting layer in the semiconductor light emitting element is suppressed.


Find Patent Forward Citations

Loading…