The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 26, 2013
Filed:
Aug. 13, 2007
Satoshi Yamasaki, Ibaraki, JP;
Toshiharu Makino, Ibaraki, JP;
Hideyo Ookushi, Ibaraki, JP;
Norio Tokuda, Ibaraki, JP;
Hiromitsu Kato, Ibaraki, JP;
Masahiko Ogura, Ibaraki, JP;
Hideyuki Watanabe, Ibaraki, JP;
Sung-gi RI, Ibaraki, JP;
Daisuke Takeuchi, Ibaraki, JP;
Satoshi Yamasaki, Ibaraki, JP;
Toshiharu Makino, Ibaraki, JP;
Hideyo Ookushi, Ibaraki, JP;
Norio Tokuda, Ibaraki, JP;
Hiromitsu Kato, Ibaraki, JP;
Masahiko Ogura, Ibaraki, JP;
Hideyuki Watanabe, Ibaraki, JP;
Sung-Gi Ri, Ibaraki, JP;
Daisuke Takeuchi, Ibaraki, JP;
Abstract
Provided is a light emitting device formed of an indirect transition semiconductor configured from a semiconductor material having high exciton binding energy, wherein an active layer of the indirect transition semiconductor or an active region by a pn junction is formed, the light emitting device has an electrode for injecting current into the active layer or the active region, and the internal quantum efficiency is 10% or more.