The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 26, 2013

Filed:

Jun. 18, 2010
Applicant:

Ken Tokashiki, Seongnam-si, KR;

Inventor:

Ken Tokashiki, Seongnam-si, KR;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 27/06 (2006.01);
U.S. Cl.
CPC ...
Abstract

Provided is a device for analyzing at least one of a generated amount of positive charges, a generated amount of negative charges, and a generated amount of ultraviolet (UV) light. The device includes a substrate on which at least one of a first device configured to detect a variation in threshold voltage relative to the generated amount of positive charges, a second device configured to detect a variation in threshold voltage relative to the generated amount of negative charges, and a third device configured to detect a variation in threshold voltage relative to the generated amount of UV light is formed. Each of the first through third devices includes a first isolation region disposed in the substrate which define first and third active regions each of a first conductivity type and second and fourth active regions each of a second conductivity type different from the first conductivity type, first impurity regions disposed in the first active region and spaced apart from each other and having the second conductivity type, a floating gate crossing over the first active region between the first impurity regions and extending over the second active region, a second impurity region disposed in the second active region and having the first conductivity type, and a conductive structure electrically connected to the second impurity region.


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