The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 26, 2013
Filed:
Jul. 20, 2011
Javier Ayala, Poughkeepsie, NY (US);
Christian Lavoie, Pleasantville, NY (US);
Ahmet S. Ozcan, Pleasantville, NY (US);
Javier Ayala, Poughkeepsie, NY (US);
Christian Lavoie, Pleasantville, NY (US);
Ahmet S. Ozcan, Pleasantville, NY (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
A method of forming a semiconductor device includes forming a silicide contact region of a field effect transistor (FET); forming a shallow impurity region in a top surface of the silicide contact region; and forming a stressed liner over the FET such that the shallow impurity region is located at an interface between the silicide contact region and the stressed liner, wherein the shallow impurity region comprises one or more impurities, and is configured to hinder diffusion of silicon within the silicide contact region and prevent morphological degradation of the silicide contact region.