The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 26, 2013
Filed:
Aug. 30, 2011
Fuminori Ito, Tokyo, JP;
Yoshihiro Hayashi, Tokyo, JP;
Tsuneo Takeuchi, Tokyo, JP;
Renesas Electronics Corporation, Kawasaki-Shi, Kanagawa, JP;
Abstract
A semiconductor device manufacturing method for manufacturing a semiconductor device having a transistor mounted in a wiring of a plural-layer structure includes in manufacturing the semiconductor device that is formed on a semiconductor element and includes a barrier insulating film, a porous interlayer insulating film, a wiring, a via plug formed by embedding a metal wiring material in a wiring trench, and a via hole formed in the porous interlayer insulating film, irradiating an electron beam or an ultraviolet ray onto at least a portion of the porous interlayer insulating film before forming an opening in the barrier insulating film.