The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 26, 2013
Filed:
Oct. 14, 2011
Jae Sik Sim, Daejeon, KR;
Ki Soo Kim, Daejeon, KR;
Bong Ki Mheen, Daejeon, KR;
Myoung Sook OH, Daejeon, KR;
Yong Hwan Kwon, Daejeon, KR;
Eun Soo Nam, Daejeon, KR;
Jae Sik Sim, Daejeon, KR;
Ki Soo Kim, Daejeon, KR;
Bong Ki Mheen, Daejeon, KR;
Myoung Sook Oh, Daejeon, KR;
Yong Hwan Kwon, Daejeon, KR;
Eun Soo Nam, Daejeon, KR;
Electronics and Telecommunications Research Institute, Daejeon, KR;
Abstract
A method includes: forming an epitaxy wafer by growing a light absorbing layer, a grading layer, an electric field buffer layer, and an amplifying layer on the front surface of a substrate in sequence; forming a diffusion control layer on the amplifying layer; forming a protective layer for protecting the diffusion control layer on the diffusion control layer; forming an etching part by etching from the protective layer to a predetermined depth of the amplifying layer; forming a first patterning part by patterning the protective layer; forming a junction region and a guardring region at the amplifying layer by diffusing a diffusion material to the etching part and the first patterning part; removing the diffusion control layer and the protective layer and forming a first electrode connected to the junction region on the amplifying layer; and forming a second electrode on the rear surface of the substrate.