The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 26, 2013
Filed:
Sep. 29, 2009
Katsuki Kusunoki, Ichihara, JP;
Katsuki Kusunoki, Ichihara, JP;
Toyoda Gosei Co., Ltd., Aichi-ken, JP;
Abstract
Provided is a method for manufacturing a semiconductor light-emitting element having a narrow wavelength distribution and comprising a substrate and a group III compound semiconductor layer formed thereon, the substrate being made of a material different from the compound semiconductor constituting the semiconductor layer. The method for manufacturing a semiconductor light-emitting element having a group III compound semiconductor layer is characterized by comprising a semiconductor layer-forming step wherein a group III compound semiconductor layer having a total thickness of not less than 8 μm is formed on a substrate () having a diameter D, a thickness and an amount of warpage H within the range of ±30 μm. The method is also characterized in that the diameter D and the thickness d of the substrate () satisfy the following formula (1):0.7×10≦()≦1.5×10  (1).