The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 26, 2013
Filed:
Jul. 25, 2011
Applicants:
Pawitter Mangat, Clifton Park, NY (US);
Lei Sun, Albany, NY (US);
Oleg Kritsun, Sunnyvale, CA (US);
Inventors:
Assignee:
GLOBALFOUNDRIES, Inc., Grand Cayman, KY;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G03F 1/24 (2012.01); G03F 1/22 (2012.01);
U.S. Cl.
CPC ...
Abstract
Embodiments of a method for fabricating an extreme ultraviolet (EUV) mask having a die pattern area are provided, as are embodiments of a method for fabricating an integrated circuit utilizing an EUV mask and embodiments of an EUV mask. In one embodiment, the EUV mask fabrication method includes obtaining an EUV mask blank including a substrate and a multi-layer (ML) reflector disposed over the substrate, and annealing localized portions of the ML reflector to produce an EUV light-absorptive border extending at least partially around an outer perimeter of the die pattern area.