The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 26, 2013
Filed:
Nov. 04, 2009
Tetsuo Sakurai, Ichihara, JP;
Tetsuo Sakurai, Ichihara, JP;
Toyoda Gosei Co., Ltd., Aichi-ken, JP;
Abstract
When compound semiconductor layers are formed on a compound semiconductor substrate () by sequentially layering group III nitride semiconductor crystalline layers by metal organic chemical vapor deposition method, the compound semiconductor substrate () is attached inside of a reaction container with the crystal growth surface thereof facing upward, a protection member () having plural grooves () formed in a radiating manner on the side facing the crystal growth surface is attached above the compound semiconductor substrate (), and a material gas is supplied to the inside of the reaction container through a first through hole () provided in the center of the protection member (). Thereby, in the manufacture of a compound semiconductor using metal organic chemical vapor deposition method, a decrease in yield caused by adhesion of peeled-off reaction byproducts to the substrate or to the epitaxially grown film on the substrate is suppressed.