The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 26, 2013
Filed:
Mar. 06, 2009
Issei Satoh, Itami, JP;
Naho Mizuhara, Itami, JP;
Keisuke Tanizaki, Itami, JP;
Michimasa Miyanaga, Itami, JP;
Takashi Sakurada, Itami, JP;
Hideaki Nakahata, Itami, JP;
Issei Satoh, Itami, JP;
Naho Mizuhara, Itami, JP;
Keisuke Tanizaki, Itami, JP;
Michimasa Miyanaga, Itami, JP;
Takashi Sakurada, Itami, JP;
Hideaki Nakahata, Itami, JP;
Sumitomo Electric Industries, Ltd., Osaka, JP;
Abstract
A compound semiconductor single-crystal manufacturing device () is furnished with: a laser light source () making it possible to sublime a source material by directing a laser beam onto the material; a reaction vessel () having a laser entry window () through which the laser beam output from the laser light source () can be transmitted to introduce the beam into the vessel interior, and that is capable of retaining a starting substrate () where sublimed source material is recrystallized; and a heater () making it possible to heat the starting substrate (). The laser beam is shone on, to heat and thereby sublime, the source material within the reaction vessel (), and compound semiconductor single crystal is grown by recrystallizing the sublimed source material onto the starting substrate (); afterwards the laser beam is employed to separate the compound semiconductor single crystal from the starting substrate ().