The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 26, 2013
Filed:
Feb. 06, 2009
Applicants:
Seiji Sarayama, Miyagi, JP;
Masahiko Shimada, Miyagi, JP;
Hisanori Yamane, Miyagi, JP;
Hirokazu Iwata, Miyagi, JP;
Inventors:
Seiji Sarayama, Miyagi, JP;
Masahiko Shimada, Miyagi, JP;
Hisanori Yamane, Miyagi, JP;
Hirokazu Iwata, Miyagi, JP;
Assignee:
Ricoh Company, Ltd., Tokyo, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/322 (2006.01);
U.S. Cl.
CPC ...
Abstract
A method is provided for producing a single crystal body of a group III nitride, comprising the steps of forming a molten flux of a volatile metal in a reaction vessel and causing a growth of a GaN single crystal from the molten flux, wherein the growth is continued while replenishing a compound containing N from a source outside the reaction vessel, and wherein a seed crystal is disposed in the reaction vessel.