The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 19, 2013
Filed:
Jul. 07, 2011
Applicants:
Jung Pill Kim, San Diego, CA (US);
Tae Hyun Kim, San Diego, CA (US);
Inventors:
Jung Pill Kim, San Diego, CA (US);
Tae Hyun Kim, San Diego, CA (US);
Assignee:
QUALCOMM Incorporated, San Diego, CA (US);
Primary Examiner:
Int. Cl.
CPC ...
G11C 11/00 (2006.01); G11C 7/02 (2006.01);
U.S. Cl.
CPC ...
Abstract
Resistance memory cells of MRAM arrays are designated as reference cells and programmed to binary 0 and binary 1 states, reference cells from one MRAM array at binary 0 and at binary 1 are concurrently accessed to obtain a reference voltage to read resistance memory cells of another MRAM array, reference cells from the other MRAM array at binary 0 and binary 1 are concurrently accessed to obtain a reference voltage to read resistance memory cells of the one MRAM array.