The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 19, 2013
Filed:
Feb. 25, 2010
Daisuke Arai, Kanagawa, JP;
Yoshito Nakazawa, Kanagawa, JP;
Norio Hosoya, Kanagawa, JP;
Renesas Electronics Corporation, Kawasaki-shi, JP;
Abstract
In order to improve characteristics of an IGBT, particularly, to reduce steady loss, turn-off time and turn-off loss, a thickness of a surface semiconductor layer is set to about 20 nm to 100 nm in an IGBT including: a base layer; a buried insulating film provided with an opening part; the surface semiconductor layer connected to the base layer below the opening part; a p type channel forming layer formed in the surface semiconductor layer; an ntype source layer; a ptype emitter layer; a gate electrode formed over the surface semiconductor layer via a gate insulating film; an ntype buffer layer; and a p type collector layer.