The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 19, 2013
Filed:
Jul. 12, 2012
Junji Hirase, Osaka, JP;
Akio Sebe, Osaka, JP;
Naoki Kotani, Hyogo, JP;
Gen Okazaki, Hyogo, JP;
Kazuhiko Aida, Chiba, JP;
Shinji Takeoka, Osaka, JP;
Junji Hirase, Osaka, JP;
Akio Sebe, Osaka, JP;
Naoki Kotani, Hyogo, JP;
Gen Okazaki, Hyogo, JP;
Kazuhiko Aida, Chiba, JP;
Shinji Takeoka, Osaka, JP;
Panasonic Corporation, Osaka, JP;
Abstract
A semiconductor device includes: a high dielectric constant gate insulating film formed on an active region in a substrate; a gate electrode formed on the high dielectric constant gate insulating film; and an insulating sidewall formed on each side surface of the gate electrode. The high dielectric constant gate insulating film is continuously formed so as to extend from under the gate electrode to under the insulating sidewall. At least part of the high dielectric constant gate insulating film located under the insulating sidewall has a smaller thickness than a thickness of part of the high dielectric constant gate insulating film located under the gate electrode.