The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 19, 2013
Filed:
Aug. 13, 2009
Tae Young Lee, Gunpo-si, KR;
IN Kyung Lee, Euiwang-si, KR;
Byoung Ho Choi, Ansan-si, KR;
Yong Soon Park, Gunpo-si, KR;
Tae Young Lee, Gunpo-si, KR;
In Kyung Lee, Euiwang-si, KR;
Byoung Ho Choi, Ansan-si, KR;
Yong Soon Park, Gunpo-si, KR;
Cheil Industries Inc., Gumi-si, KR;
Abstract
A slurry composition for chemical mechanical polishing (CMP) of a phase-change memory device is provided. The slurry composition comprises deionized water and iron or an iron compound. The slurry composition can achieve high polishing rate on a phase-change memory device and improved polishing selectivity between a phase-change memory material and a polish stop layer (e.g., a silicon oxide film), can minimize the occurrence of processing imperfections (e.g., dishing and erosion), and can lower the etch rate on a phase-change memory material to provide a high-quality polished surface. Further provided is a method for polishing a phase-change memory device using the slurry composition.