The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 19, 2013
Filed:
Nov. 30, 2011
Hokyun Ahn, Daejeon, KR;
Jong-won Lim, Daejeon, KR;
Hyung Sup Yoon, Daejeon, KR;
Byoung-gue Min, Daejeon, KR;
Sang-heung Lee, Daejeon, KR;
Hae Cheon Kim, Daejeon, KR;
Eun Soo Nam, Daejeon, KR;
Hokyun Ahn, Daejeon, KR;
Jong-Won Lim, Daejeon, KR;
Hyung Sup Yoon, Daejeon, KR;
Byoung-Gue Min, Daejeon, KR;
Sang-Heung Lee, Daejeon, KR;
Hae Cheon Kim, Daejeon, KR;
Eun Soo Nam, Daejeon, KR;
Electronics and Telecommunications Research Institute, Daejeon, KR;
Abstract
Disclosed are a method of manufacturing a field-effect transistor. The disclosed method includes: providing a semiconductor substrate; forming a source ohmic metal layer on one side of the semiconductor substrate; forming a drain ohmic metal layer on another side of the semiconductor substrate; forming a gate electrode between the source ohmic metal layer and the drain ohmic metal layer, on an upper portion of the semiconductor substrate; forming an insulating film on the semiconductor substrate's upper portion including the source ohmic metal layer, the drain ohmic metal layer and the gate electrode; and forming a plurality of field electrodes on an upper portion of the insulating film, wherein the insulating film below the respective field electrodes has different thicknesses.