The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 19, 2013
Filed:
Dec. 10, 2010
An-thung Cho, Hualien County, TW;
Wan-yi Liu, Hsinchu, TW;
Chia-kai Chen, Taichung County, TW;
Wu-hsiung Lin, Hsinchu, TW;
Chun-hsiun Chen, Hsinchu, TW;
Wei-ming Huang, Taipei, TW;
An-Thung Cho, Hualien County, TW;
Wan-Yi Liu, Hsinchu, TW;
Chia-Kai Chen, Taichung County, TW;
Wu-Hsiung Lin, Hsinchu, TW;
Chun-Hsiun Chen, Hsinchu, TW;
Wei-Ming Huang, Taipei, TW;
Au Optronics Corporation, Hsinchu, TW;
Abstract
A thin film transistor disposed on a substrate is provided. The thin film transistor includes a gate, a gate insulating layer, a silicon-rich channel layer, a source, and a drain. The gate is disposed on the substrate. The gate insulator is disposed over the gate. The silicon-rich channel layer is disposed above the gate, wherein the material of the silicon-rich channel layer is selected from a group consisting of silicon-rich silicon oxide (Si-rich SiOx), silicon-rich silicon nitride (Si-rich SiNx), silicon-rich silicon oxynitride (Si-rich SiOxNy), silicon-rich silicon carbide (Si-rich SiC) and silicon-rich silicon oxycarbide (Si-rich SiOC). The content (concentration) of silicon of the silicon-rich channel layer within a film depth between 10 nm to 170 nm ranges from about 1E23 atoms/cmto about 4E23 atoms/cm. The source and the drain are connected with the silicon-rich channel layer.