The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 19, 2013
Filed:
Jul. 23, 2008
Giso Hahn, Constance, DE;
Helge Haverkamp, Constance, DE;
Bernd Raabe, Constance, DE;
Amir Dastgheib-shirazi, Constance, DE;
Felix Book, Constance, DE;
Giso Hahn, Constance, DE;
Helge Haverkamp, Constance, DE;
Bernd Raabe, Constance, DE;
Amir Dastgheib-Shirazi, Constance, DE;
Felix Book, Constance, DE;
Abstract
A method is presented for producing a silicon solar cell with a back-etched emitter preferably with a selective emitter and a corresponding solar cell. According to one aspect, the method comprises the following method steps: producing a two-dimensionally extending emitter at an emitter surface of a solar cell substrate; applying an etching barrier onto first partial zones of the emitter surface; etching the emitter surface in second partial zones of the emitter surface not covered by the etching barrier; removing the etching barrier; and producing metal contacts at the first partial zones. During the method, especially during the etching of the emitter surface in the second partial zones, a porous silicon layer is advantageously produced, which is then oxidized. This oxidized porous silicon layer can subsequently be etched away together with any phosphorus glass that may be present. The method makes use of conventional screen-printing and etching technologies and is thus compatible with current industrial production plants.