The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 19, 2013

Filed:

Mar. 22, 2012
Applicants:

Satoshi Watanabe, Jyoetsu, JP;

Akinobu Tanaka, Jyoetsu, JP;

Takeru Watanabe, Jyoetsu, JP;

Takeshi Kinsho, Jyoetsu, JP;

Inventors:

Satoshi Watanabe, Jyoetsu, JP;

Akinobu Tanaka, Jyoetsu, JP;

Takeru Watanabe, Jyoetsu, JP;

Takeshi Kinsho, Jyoetsu, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G03F 7/00 (2006.01); G03F 7/028 (2006.01); G03F 7/40 (2006.01);
U.S. Cl.
CPC ...
Abstract

The present invention relates to: a resist composition such as a chemically amplified resist composition for providing an excellent pattern profile even at a substrate-side boundary face of resist, in addition to a higher resolution in photolithography for micro-fabrication, and particularly in photolithography adopting, as an exposure source, KrF laser, ArF laser, Flaser, ultra-short ultraviolet light, electron beam, X-rays, or the like; and a patterning process utilizing the resist composition. The present invention provides a chemically amplified resist composition comprising one or more kinds of amine compounds or amine oxide compounds (except for those having a nitrogen atom of amine or amine oxide included in a ring structure of an aromatic ring) at least having a carboxyl group and having no hydrogen atoms covalently bonded to a nitrogen atom as a basic center.


Find Patent Forward Citations

Loading…