The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 19, 2013
Filed:
Dec. 13, 2011
Toshio Suzuki, Akita, JP;
Toshio Suzuki, Akita, JP;
Akita Prefecture, Akita, JP;
TDK Corporation, Tokyo, JP;
Abstract
A large spin-polarized current can be provided. A single crystal MgO layer is grown on an Si single crystal substrate, being lattice-matched. Thereon, a ferromagnetic metal layer is grown. Growth plane of MgO layer formed on (100) plane of Si single crystal substrate is (100) plane. At interface between Si single crystal substrate and MgO layer, Si (100) [110] and MgO (100) [100] directions are parallel. FIG.(A) shows Si (100) plane, FIG.(B) MgO (100) plane, and FIG.(C) the state of these two planes being lattice-matched. Si (100) plane in FIG.(A) is constituted by Si atomsalone, while MgO (100) plane in FIG.(B) is constituted by Mg atomsand oxygen (O) atoms. MgO (100) plane is grown on Si (100) plane, and as shown in FIG.(C), Si (100) [110] and MgO (100) [100] directions are parallel at the interface.