The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 19, 2013
Filed:
Sep. 05, 2005
Yuichiro Shindo, Ibaraki, JP;
Kouichi Takemoto, Ibaraki, JP;
Yuichiro Shindo, Ibaraki, JP;
Kouichi Takemoto, Ibaraki, JP;
JX Nippon Mining & Metals Corporation, Tokyo, JP;
Abstract
A high purity ZrBpowder having a purity of 99.9 wt % or higher excluding C and gas components, and a manufacturing method of such high purity ZrBpowder, including the steps of: subjecting a Zr sponge raw material to electron beam melting and casting to prepare an ingot having a purity of 99.9 wt % or higher; cutting the ingot into a cut powder and hydrogenating the cut powder into ZrH; pulverizing and dehydrogenating the resultant product into a Zr powder and oxidizing the Zr powder at a high temperature in an oxygen atmosphere into a ZrOfine powder; and mixing the ZrOfine powder with B having a purity of 99.9 wt % or higher so as to reduce ZrOand obtain a ZrBpowder having a purity of 99.9 wt % or higher. Purity of the ZrBpowder for use in sintering is made to be 99.9 wt % or higher, which is required in the manufacture of a ZrBsingle crystal substrate with the high frequency induction heating FZ method (Floating Zone Method), and it is thereby possible to obtain a high purity ZrBpowder and the manufacturing method thereof enabling the enlargement of a ZrBsingle crystal substrate and reduction in the manufacturing costs associated therewith.