The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 12, 2013
Filed:
Nov. 09, 2012
Applicant:
Marvell International Ltd., Hamilton, BM;
Inventors:
Jason T Su, Los Altos, CA (US);
Karthik Swaminathan, San Jose, CA (US);
Assignee:
Marvell International Ltd., Hamilton, BM;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 5/14 (2006.01);
U.S. Cl.
CPC ...
Abstract
Described herein are methods and apparatuses for write-assist voltage generation and power-down voltage scaling for static random access memory (SRAM) cells. According to various embodiments, an SRAM cell may include a local power supply voltage node for receiving a power supply voltage generated by a power supply voltage generator circuit, the generated power supply voltage being substantially equal to or less than a global power supply voltage provided to one or more transistors of the SRAM cell during a write-enable or power-down mode.