The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 12, 2013
Filed:
Nov. 21, 2011
Hirobumi Tanaka, Tokyo, JP;
Makoto Endo, Tokyo, JP;
Satoko Ueda, Tokyo, JP;
Daisuke Ueda, Tokyo, JP;
Shogo Murosawa, Tokyo, JP;
Daisuke Yoshida, Tokyo, JP;
Kenta Ono, Tokyo, JP;
Minoru Ogasawara, Tokyo, JP;
Tatsuya Kikuchi, Tokyo, JP;
Hirobumi Tanaka, Tokyo, JP;
Makoto Endo, Tokyo, JP;
Satoko Ueda, Tokyo, JP;
Daisuke Ueda, Tokyo, JP;
Shogo Murosawa, Tokyo, JP;
Daisuke Yoshida, Tokyo, JP;
Kenta Ono, Tokyo, JP;
Minoru Ogasawara, Tokyo, JP;
Tatsuya Kikuchi, Tokyo, JP;
TDK Corporation, Tokyo, JP;
Abstract
A multilayer ceramic electronic component comprising an element body in which a dielectric layer and an internal electrode layer are stacked. The dielectric layer is constituted from a dielectric ceramic composition including; a compound having a perovskite structure expressed by a formula of ABO(A is at least one selected from Ba, Ca, and Sr; B is at least one selected from Ti, Zr, and Hf); an oxide of Mg; an oxide of rare earth elements including Sc and Y; and an oxide including Si. The dielectric ceramic composition comprises a plurality of dielectric particles and a grain boundary present in between the dielectric particles. In the grain boundary, when content ratios of Mg and Si are set to D(Mg) and D(Si) respectively, D(Mg) is 0.2 to 1.8 wt % in terms of MgO, and D(Si) is 0.4 to 8.0 wt % in terms of SiO.