The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 12, 2013
Filed:
Dec. 08, 2010
Kazuhiro Murakami, Kyoto, JP;
Mikiya Doi, Kyoto, JP;
Yosuke Fukumoto, Kyoto, JP;
Rohm Co., Ltd., Kyoto, JP;
Abstract
The semiconductor device according to the present invention has an n-channel output transistor wherein an input voltage is impressed on a drain, and a pulsed switching voltage that corresponds to a switching drive of the transistor is brought out from a source; a bootstrap circuit for generating a boost voltage enhanced by a predetermined electric potential above the switching voltage; an internal circuit for receiving a supply of the boost voltage to generate a switching drive signal, and supplying the signal to a gate of the output transistor; an overvoltage protection circuit for monitoring an electric potential difference between the switching voltage and the boost voltage, and generating an overvoltage detection signal; and a switching element for establishing/blocking electrical conduction between the internal circuit and the end impressed with the boost voltage, in accordance with the overvoltage detection signal.