The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 12, 2013
Filed:
Jun. 13, 2008
Hirotoshi Terada, Hamamatsu, JP;
Hiroshi Tanabe, Hamamatsu, JP;
Hirotoshi Terada, Hamamatsu, JP;
Hiroshi Tanabe, Hamamatsu, JP;
Hamamatsu Photonics K.K., Hamamatsu-shi, Shizuoka, JP;
Abstract
When it is detected that a solid immersion lens comes into contact with the semiconductor device, the lens is caused to vibrate by a vibration generator unit. Next, a reflected light image from the lens is input to calculate a reflected light quantity of the reflected light image, and it is judged whether a ratio of the reflected light quantity to an incident light quantity is not greater than a threshold value. When the ratio is greater than the threshold value, it is judged that optical close contact between the lens and the semiconductor device is not achieved, and the lens is again caused to vibrate. When the ratio is not greater than the threshold value, it is judged that optical close contact between the lens and the semiconductor device is achieved, and an observed image of the semiconductor device is acquired.