The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 8581367 B1

PDF
Full Text
Expired
Date of Patent:
Nov. 12, 2013

Filed:

Sep. 02, 2008
Applicant:

Tadahiro Okazaki, Kyoto, JP;

Inventor:

Tadahiro Okazaki, Kyoto, JP;

Assignee:

Rohm Co., Ltd., Kyoto-Fu, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/861 (2006.01);
U.S. Cl.
CPC ...
Abstract

A semiconductor device includes a substrate having first main face having rectangular shape, a first electrode provided at the center on first main face of substrate, first electrode is made of conducting material harder than substrate, and a second electrode provided along at least a part of the periphery on first main face so as to surround first electrode, second electrode is integrated with first electrode by the same conducting material as that of the first electrode, and second electrode has a thinner film thickness than that of the first electrode.


Find Patent Forward Citations

Okazaki, Tadahiro. (2013). Semiconductor device having electrode film in which film thickness of periphery is thinner than film thickness of center (U.S. Patent No. 8581367). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/8581367

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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