The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 12, 2013
Filed:
May. 23, 2012
Applicant:
Takeo Matsuki, Ibaraki, JP;
Inventor:
Takeo Matsuki, Ibaraki, JP;
Assignee:
Renesas Electronics Corporation, Kanagawa, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/70 (2006.01); H01L 29/78 (2006.01);
U.S. Cl.
CPC ...
Abstract
Current drive efficiency is deteriorated in the conventional FET. The FETincludes an electrode filmprovided over the semiconductor substrateand a stressor filmthat is provided on the electrode filmand constitutes a gate electrodetogether with the electrode film. Each of the electrode filmand the stressor filmis composed of a metal, a metallic nitride or a metallic silicide. The stressor filmis capable of exhibiting a compressive stress over the semiconductor substrate