The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 12, 2013
Filed:
Jul. 13, 2010
Masahiro Adachi, Osaka, JP;
Shinji Tokuyama, Osaka, JP;
Koji Katayama, Osaka, JP;
Sumitomo Electric Industries, Ltd., Osaka-shi, Osaka, JP;
Abstract
A compound semiconductor device having reduced contact resistance to an electrode is provided. The compound semiconductor device includes an n-substratecomprising a hexagonal compound semiconductor GaN and having surfaces Sand S; an n-electrodeformed on the surface Sof the n-substrate; a layered product having an n-cladding layer, an active layer, a p-cladding layer, and a contact layerformed on the surface Sof the n-substrate; and a p-electrodeformed on the p-cladding layer. The number of N atoms contained on the surface Sof the n-substrateis more than the number of Ga atoms contained on the surface S. The electrode formed on the surface Sis an n-electrode. The surface Shas an oxygen concentration of not more than 5 atomic percent. The number of Ga atoms contained on the surface Sof the contact layeris more than the number of N atoms contained on the surface S. The electrode formed on the surface Sis a p-electrode. The surface Shas an oxygen concentration of not more than 5 atomic percent.