The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 12, 2013
Filed:
Jan. 12, 2011
Applicants:
Joon Seok Park, Seongnam-si, KR;
Tae Sang Kim, Seoul, KR;
Inventors:
Joon Seok Park, Seongnam-si, KR;
Tae Sang Kim, Seoul, KR;
Assignee:
Samsung Electronics Co., Ltd., Gyeonggi-Do, KR;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/786 (2006.01); H01L 21/34 (2006.01);
U.S. Cl.
CPC ...
Abstract
Example embodiments are directed to oxide thin film transistors and methods of manufacturing the oxide thin film transistors. The oxide thin film transistor includes an active region in a gate insulation layer and under a source and a drain in a bottom gate structure, thus improving electrical characteristics of the oxide thin film transistor.
Park, Joon. (2013). Oxide thin film transistors and methods of manufacturing the same (U.S. Patent No. 8581244). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/8581244
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile