The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 12, 2013
Filed:
Oct. 07, 2009
Christoph Wasshuber, Somerville, MA (US);
Christoph Wasshuber, Somerville, MA (US);
Texas Instruments Incorporated, Dallas, TX (US);
Abstract
The present invention provides a single-electron transistor device. The device comprises a sourceand drainlocated over a substrateand a quantum islandsituated between the source and drain, to form tunnel junctionsbetween the source and drain. The device further includes a fixed-gate electrodelocated adjacent the quantum island. The fixed-gate electrode has a capacitance associated therewith that varies as a function of an applied voltage to the fixed-gate electrode. The present invention also includes a method of fabricating a single-electron device, and a transistor circuitthat include a single-electron device
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile